Modeling a Schottky-barrier carbon nanotube field-effect transistor with ferromagnetic contacts

摘要

In this study, a model of a Schottky-barrier carbon nanotube field- effecttransistor (CNT-FET), with ferromagnetic contacts, has been developed. Theemphasis is put on analysis of current-voltage characteristics as well as shot(and thermal) noise. The method is based on the tight-binding model and thenon- equilibrium Green's function technique. The calculations show that, atroom temperature, the shot noise of the CNT FET is Poissonian in thesub-threshold region, whereas in elevated gate and drain/source voltage regionsthe Fano factor gets strongly reduced. Moreover, transport properties stronglydepend on relative magnetization orientations in the source and drain contacts.In particular, one observes quite a large tunnel magnetoresistance, whoseabsolute value may exceed 50%.